Abstract
Silicon carbonitride (SiCN) thin films were deposited on p-Si (100) substrates with different \(\hbox {N}_{2}\) flow rates using SiC and \(\hbox {Si}_{3}\hbox {N}_{4}\) powder precursors by chemical vapour deposition. To investigate the structural, vibrational and mechanical properties, the SiCN thin films were characterized by atomic force microscopy, Raman spectroscopy, X-ray diffraction (XRD), Fourier transform infrared and nanoindentation techniques. The XRD results reveal nanocrystals embedded with amorphous networks in the SiCN thin films. An increase in the \(I_{\mathrm{D}}/I_{\mathrm{G}}\) ratio with an increase in the \(\hbox {N}_{2}\) flow rate indicated the increase of \(\hbox {sp}^{3}\) bonds in the SiCN thin film. The hardness (H), Young’s modulus (E), plasticity index (H / E) and \((H^{3}/E^{2})\) increase with an increase in the \(\hbox {N}_{2}\) flow rate.
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