Abstract
Niobium doped strontium titanate [Sr(Ti1−xNbx)O3] thin films (≅40 nm) were deposited on Ir substrates using rf magnetron sputtering. The effect of Nb content (x=0, 0.001, 0.01, and 0.05) on the microstructure, dielectric constant, dielectric dispersion, and leakage current was studied. It was found that with increasing Nb content the dielectric constant decreased, probably owing to an observed decrease in grain size. The dielectric dispersion of all the Nb-doped ST films was lower than that of undoped ST film deposited at the same temperature and pressure. For the case of x=0.01, dispersion as low as 0.425% per decade was observed. The leakage current was found to increase slightly for x=0.001 and x=0.01, and drastically for the x=0.05 case.
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