Abstract
In this article, the 3D integration with Ni/Sn/Ni joints was conducted using transient liquid phase (TLP) bonding (250°C, 0.2 N) with different bonding time. After TLP bonding, plane-type Ni3Sn4 intermetallic compound (IMC) was observed, and when the bonding time is 180 min, complete Ni3Sn4 was found. The diffusion coefficient D was determined to be 32.4 μm2/min. Based on the finite element (FE) simulation, the results demonstrated that the shear stress and equivalent creep strain increased obviously with an increase in the IMC thickness; the results calculated show that the IMC thickness impacts the fatigue life of solder joints significantly, and the fatigue life decreases notably with an increase in the Ni3Sn4 thickness.
Highlights
With the development of chip technology, three-dimensional (3D) integrated circuits (IC) technology overcomes the limits of Moore’s law to ensure the chip vertical stacking (Zhang et al, 2018; Zhang and Liu, 2020); due to the advantages of relatively low temperature bonding and high temperature service, transient liquid phase (TLP) bonding has gradually become an attractive bonding technology in 3D chips stacking with complete intermetallic compound (IMC)
Due to the high Sn in the solder joints, the Ni3Sn4 phase can be formed at the Sn/Ni interface after TLP bonding with different bonding time according to the Ni-Sn phase diagram
In an electronic device, during soldering, the molten Sn-based solder was spread on Cu substrate to form Cu-Sn IMC; the scallop-type Cu6Sn5 phases were detected at the interfacial microstructure, and for Ni/Sn/Ni structure, the plane-type Ni3Sn4 IMC was demonstrated
Summary
With the development of chip technology, three-dimensional (3D) integrated circuits (IC) technology overcomes the limits of Moore’s law to ensure the chip (or wafer) vertical stacking (Zhang et al, 2018; Zhang and Liu, 2020); due to the advantages of relatively low temperature bonding and high temperature service, transient liquid phase (TLP) bonding has gradually become an attractive bonding technology in 3D chips stacking with complete intermetallic compound (IMC).
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