Abstract
It has been predicted that near-threshold ionization (NTI) in a gaseous dielectric inhibits the development of electron avalanche when the gaseous dielectric has a sufficient capability for low-energy electron attachment. The NTI leaves little energy for the primary and secondary electrons involved in the ionization; thus, both electrons can be captured by dielectric gas molecules without further ionization. A computational estimation indicates that this process can occur in SF6.
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