Abstract
The effect of a layer of GaN nanopillars with SiO2 nanoparticles inserted into the n+-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on patterned sapphire substrates is reported. The PL and EL intensities for these SiO2 LEDs are measurably enhanced compared with reference to LEDs without the nanopillar sublayer. This correlates with the decrease in the SiO2 LEDs of the concentration of 0.25 eV electron traps and 0.45 eV hole traps, both located in the InGaN QWs.
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