Abstract
Memory resistive devices using a ZnO dielectric layer are promising due to the transparent nature, lower operating voltage, synthesis compatible with semiconductor processing, and ability to control using magnetic fields. In the present work, niobium incorporated MoS2 films in combination with ZnO are used to form diode-resistor devices with memory. The two device structures p-Si-SiO2/Pt/MoS2(Nb)/ZnO/Ag and p-Si-SiO2/Pt/ZnO/Ag are grown using laser physical vapor deposition. The resistive characteristics are investigated as a function of temperature for comparison. The unipolar I-V characteristics of Pt/ZnO/Ag device films were found to be nonreproducible, and the temperature dependence was irregular for negative polarity. The unipolar I-V characteristics of Pt/MoS2(Nb)/ZnO/Ag device films were found to be reproducible. The temperature dependence of the I-V characteristics was regular for both polarities. The presence of a MoS2 film is found to improve and distinguish the effect of the polarity of the applied field on the unipolar device characteristics by the formation of a p-n device configuration. The conductance in the transition from a low resistance state to a high resistance state was found to follow the Schottky emission with the apparent barrier height being influenced by the p-n junction.
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