Abstract
The authors investigated the effects of MoO3 doping power on the electrical, optical, and structural properties of MoO3-doped In2O3 (IMO) films for use as transparent electrodes in organic solar cells (OSCs). By optimizing the RF power of the MoO3 target (30 W), they obtained IMO films with sheet resistance of 24.57 Ω/sq and optical transmittance of 81.57%, comparable to conventional Sn-doped In2O3 (ITO) electrodes. In particular, the IMO film exhibited a high optical transmittance in the near-infrared (NIR) wavelength region due to the effects of Mo dopant with high Lewis acid strength and high mobility. In addition, strongly oriented (222) grains led to a smooth surface of the IMO electrode with root mean square roughness of 2.344 nm. The OSC fabricated on the optimized IMO electrode showed cell performances with a fill factor of 64.66%, a short circuit current of 8.058 mA/cm2, an open circuit voltage of 0.611 V, and a power conversion efficiency of 3.186%, which are nearly identical to OSCs with an ITO reference. This indicates that the IMO film is a promising alternative to the ITO electrode for the tandem OSC absorbing NIR wavelength region.
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