Abstract
Effect of Moisture and Temperature on Thin-Film Transistors In article number 2102584, Zhiying Chen, Meng Zhang, and co-workers study the effect of moisture exchange on device characteristics and instability in InSnZnO thin-film transistors (TFTs). The temperature and relative humidity on the device surface jointly determine the moisture diffusion direction. The proposed model is beneficial for the reliable designing of InSnZnO TFTs in commercial applications.
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