Abstract
We report on the preparation and characterization of high purity manganese (3–9 wt.%) doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol–gel mediated dip coating. X-ray diffraction and selected area electron diffraction showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Mn doping. High-resolution transmission electron microscopy depicted a uniform distribution of ∼20 nm sized independent particles and particle induced x-ray emission studies confirmed the actual Mn ion concentration. UV-Vis diffuse reflectance measurements showed band gap energy of 3.75 eV and a high degree of optical transparency (90%) in the 100–500 nm thick ITO films. X-ray photoelectron spectroscopy core level binding energies for In 3d5/2 (443.6 eV), Sn 3d5/2 (485.6 eV) and Mn 2p3/2 (640.2 eV) indicated the In3+, Sn4+ and Mn2+ oxidation states. Magnetic hysteresis loops recorded at 300 K yield a coercivity Hc ∼ 80 Oe and saturation magnetization Ms ∼ 0.39 μB/Mn2+ ion. High-temperature magnetometry showed a Curie temperature T c > 600 K for the 3.2% Mn doped ITO film.
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