Abstract
Thin films of Pb0.3Sr0.7TiO3 (PST) and 2 mol% Mn-doped PST (Pb0.3Sr0.7Ti0.98Mn0.02O3 or PSMT2) were fabricated on (001)-oriented LaAlO3 substrates using sol-gel and spin-coating techniques. The ferroelectric transition temperature did not change with Mn doping. However, dielectric constant and figure of merit (K) were found to increase with Mn doping in PST film. At room temperature and 20 kV/cm applied field, a maximum K value of pure PST film was found to be merely 0.887, which improved to 22.36 and 29.85 at 20 kV/cm and 40 kV/cm, respectively for the 2% Mn doped PST film.
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