Effect of Mn doping on structures and properties of chemical solution deposited lead zirconate titanate thick films with (100) preferential orientation

Abstract

Mn doped PbZr0.52Ti0.48O3 (PZT) thick films with highly (100) preferential orientation have been prepared by chemical solution deposition according to doping concentration of 0, 0.5, 1, 2, and 3 mol. %. The effect of Mn-doping on structures and electrical properties of PZT thick films has been investigated. With increasing Mn doping concentration, the dielectric constant first increases and then decreases. PZT film with 0.5 mol. % Mn doping has a maximum value of 2252 and a dielectric loss of 0.011 at 1 kHz. Mn doping below 3 mol. % could effectively reduce the leakage current density of PZT films. The mechanism of Mn doping on dielectric and ferroelectric properties of PZT thick films has been investigated and discussed.