Abstract
Lead zirconate titanate (Pb1.1(Zr0.52Ti0.48)O3) thinfilms of thickness 260 nm on Pt/Ti/SiO2/Si substrates were densified by 2.45 GHz microwave annealing. The PZTthin films were annealed at various annealing temperatures from400 to700 °C for30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phaseat 450 °C and the film was fully crystallized. The secondary (again pyrochlore)phase was observed in the PZT thin films, which were annealed above550 °C. The surface morphologies were changed above550 °C of the PZT thin films due to the secondary phase. Higher dielectric constant(εr) and lower dielectricloss coercive field (Ec) were achieved for the 450 °C film than for the other annealed films.
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