Abstract
We investigated the carrier concentration and Hall mobility of epitaxial β-FeSi2 films grown on semi-insulating 4H-SiC(001) single crystals to clarify the contribution of the microstructures to their electrical conduction properties. These electrical conduction properties of epitaxial β-FeSi2 films were changed by their grain size. The Hall mobility of the films consisting of the grains of 250–350nm in size was limited by the grain boundaries, while it was not limited by grain boundaries for the films consisting of the coarse grains of 20–40µm in size but limited by defects inside the grains.
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