Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

Abstract

A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent annealing. The ferromagnetic property was obtained after annealing at 800 °C. This was attributed to the formation of Ga–Mn magnetic phases. Higher temperature annealing at 900 °C reduced the ferromagnetic signal and produced antiferromagnetic Mn–N compounds such as Mn6N2.58 and Mn3N2, leaving N vacancies. This provides evidence that N vacancies play a critical role in weakening the ferromagnetic property in the Mn-implanted GaN.