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Abstract
We have investigated the effect of micro-twin defects on InSb quantum wells (QWs) grown on GaAs (001) substrates. Transmission electron microscopy analysis revealed that the QW layers are intersected by micro-twins that arise from lattice mismatch with the substrate. The intersected parts of the QWs lie near or in the {111} plane, which is tilted by 15.8° with respect to the (001) substrate. Hall effect measurements indicated that the degradation of electron mobility in the QWs is well correlated with the density of the micro-twins.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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