Abstract
We have investigated the effect of micro-twin defects on InSb quantum wells (QWs) grown on GaAs (001) substrates. Transmission electron microscopy analysis revealed that the QW layers are intersected by micro-twins that arise from lattice mismatch with the substrate. The intersected parts of the QWs lie near or in the {111} plane, which is tilted by 15.8° with respect to the (001) substrate. Hall effect measurements indicated that the degradation of electron mobility in the QWs is well correlated with the density of the micro-twins.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
