Abstract
Recently, there has been a growing interest in the thermal stability in magnetic tunnel junction (MTJ) devices with an aspect of the temperature increment during current-induced magnetization switching (CIMS) process. In this work, the temperature increment is explored with factors of the tile of the initial magnetization direction in free layer, θ0, and the MgO layer thickness for different pulse durations, tp. The results show that the highest temperature in MTJ nanopillar is significant at the θ0 of1°-5° and the pulse duration tp < 0.4 ns. Moreover, the temperature results with decreasing the MgO layer thickness are not considerable difference at θ0 of1°-5° for the same tp.
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