Abstract

Diamond films were deposited by using methane and hydrogen as the gas source and utilizing the approach of chemical vapor deposition of microwave plasmas on the monocrystalline silicon piece. An analysis was also conducted to investigate the influence of methane concentration on the diamond film. When the methane concentration was set at 0.5%, the experiment turned out to have the high quality diamond film which was dense with homogeneous sizes. In condition that the methane concentration was 2.44%, the film obtained was much denser but with larger proportion of non-diamond components. In case that the methane concentration was about 0.25%, the purity of diamond film was declined while the film was inconsistent.

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