Abstract
The effect of methane concentration on the growth of crystalline α- and β-C 3 N 4 films have been studied in bias-assisted hot filament chemical vapor deposition system by using a low-pressure methane-nitrogen gas mixture. Scanning electron microscopy, energy dispersive X-ray analysis, and X-ray diffraction have been used to characterize the films obtained. The results indicate that a methane concentration of 0.5 vol% leads to a compatible growth of α- and β-C 3 N 4 ; 1.0 and 2.0 vol% lead to the selected growth of β- and α-C 3 N 4 , respectively. The lattice constants of the C 3 N 4 phases synthesized at different methane concentrations coincide very well with the ab initio calculation results. Moreover, two recently identified CN new phases with tetragonal and monoclinic structure are found in all of the depositions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have