Effect of mesh bias on the properties of the lateral conductivity of intrinsic microcrystalline silicon films deposited by low-frequency inductively coupled plasma

Abstract

A meshgrid is installed to study the effect of mesh bias on the lateral conductivity properties of intrinsic microcrystalline silicon films deposited by low frequency inductively coupled plasma. When a mesh bias is increased from 0 to −15 V, the dark conductivity remarkably decreases by three orders of magnitude, whereas the ratio of the photo and dark conductivity improves by one order. On contrary, the applied substrate bias has only a marginal effect on the lateral conductivity. It is revealed from the measured electron energy distribution functions that the sheath layer induced ion bombardment is responsible for the drastic change.