Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol–gel method for non-volatile memory

Abstract

Bi3.15Nd0.85Ti3O12 (BNT) thin films were prepared on Pt/Ti/SiO2/Si substrates by the sol–gel method. The phase composition was detected by XRD, the microstructure was characterized by AFM, and the effect of measuring factors (such as environmental temperature, working frequency, and voltage) on the ferroelectric properties was investigated. The films show the single Bi-layered Aurivillius phase with random orientation. At room temperature, the remanent polarization (2Pr) and the coercive field (2Ec) are 39.1 μC/cm2 and 160.5 kV/cm, respectively, and a BNT capacitor shows fatigue-free behavior and memory retention. With the decrease of temperature, 2Vc increases, J decreases slightly, and the general trend of 2Pr is decreased. With the increase of frequency, 2Pr declines and 2Vc increases.