Abstract
The initial self-catalyze GaAs nanowire (NW) growth stages were studied using Monte Carlo simulation. We analyzed the effect of the mask-film etching rate with liquid gallium for different thicknesses on the initial nanowire formation stages. At a high etching rate NWs do not form on thick mask-films. A high etching rate of a thin film-mask can lead to lateral Ga drop motion over the crystalline substrate surface, which delays the nanowire formation onset. It is shown that, for the NW formation, it is necessary to maintain the correct ratio between the film thickness, etching rate, Ga and As2 flux intensities.
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