Abstract
An attempt is made to formulate the Einstein relation for the diffusivity-mobility ratio of the carriers in degenerate semiconductors having Kane-type energy bands in the presence of a quantizing magnetic field, taking degenerate n-InAs as an example. It is found on the basis of the three-band Kane model, which is the most valid model for n-InAs, that the same ratio oscillates with changing magnetic field only under degenerate conditions and remains unaffected otherwise. The corresponding results for parabolic semiconductors are also obtained from the expressions derived.
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