Abstract

The broadening of the exciton line caused by elastic scattering of the exciton on fluctuations of magnetic impurity concentration and spin projection in CdMnTe/CdTe/CdMnTe quantum wells is calculated. The relaxation time as a function of well width is found. The possibility of suppression of the impurity concentration fluctuation potential by a magnetic field in diluted magnetic semiconductors and of a corresponding narrowing of the exciton reflection lines in quantum wells is predicted. It is shown that the line broadening of the σ - component of the exciton transition increases as the magnetic field rises, and the broadening of the σ + component decreases. The effect of impurity concentration fluctuations on light reflection by a quantum well is analyzed.

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