Effect of Magnetic Field on Activation Performance of Silicon/Glass Dielectric Barrier Discharge

Abstract

In order to study the influence of the magnetic field on the surface activity of the low-temperature anode bonding material in the dielectric barrier discharge, a dielectric barrier discharge device with and without a magnetic field is used, and the glass in the anode bonding is used as a dielectric barrier material. The results of analysis and characterization using angular contact instrument and surface free energy measuring instrument show that the dielectric angle barrier discharge plasma treatment with and without magnetic field can reduce the contact angle and free energy of the silicon/glass surface. Under the discharge gap of 0.08mm, when the magnetic field is absent, the hydrophilic angle of the glass approaches 0°, and the hydrophilic angle of the silicon wafer is as low as 19°. When the magnetic field is applied, the hydrophilic angle of the glass approaches 0°. The minimum hydrophilic angle of the tablet is up to 14°. By contrast, the hydrophilic angle and free energy of silicon/glass materials treated by a dielectric barrier discharge with magnetic field are better.