Abstract
Ti–Si–N films were deposited on the grounded Si(100) substrates by inductively coupled plasma (ICP)-assisted magnetron sputtering. The incident ion flux density at the substrate was varied by controlling the RF power. The effects of low-energy ion flux irradiation on the growth, microstructure and mechanical properties of the Ti–Si–N films have been investigated. An increase in ion flux density causes a transfer of the preferred orientation from TiN(111) to TiN(200). Under the conditions of high-density (∼2.0 mA/cm2) low-energy (∼20 eV) ion irradiation, low-stressed superhard nanocrystalline TiN/amorphous Si3N4 (nc-TiN/a-Si3N4) film was synthesized at the relatively low deposition temperature of 300 °C.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call