Abstract
AbstractThe effect of low energy e‐beam irradiation on the InGaN related cathodoluminescence in the MQW InGaN/GaN LED structures with different number of quantum wells has been studied. It is shown that the e‐beam exposure leads to an increase of emission intensity and to a formation of new blue‐shifted emission bands. It is shown that the changes in the optical properties are determined by the excess carrier injection. The changes observed were associated with the local changes of InGaN content due to In and/or Ga diffusion stimulated by the excess carrier recombination (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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