Abstract
The charge carrier density distribution in uniformly doped AlGaAs/GaAs superlattices with layer thicknesses of 1.5/10 nm and different numbers of quantum wells was studied. Both energy band theory and capacitance–voltage profiling were used to determine the carrier concentration profiles of the structures. During the analysis of the experimental and simulated capacitance–voltage characteristics, it was found that the maximum electron concentrations increase with an increase in the number of quantum wells from ∼ 7.1⋅1016cm−3 for three wells to ∼ 9.3⋅1016cm−3 for 25 wells with an overall superlattice doping level of ∼ 1017cm−3.
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