Abstract
The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low energy (10 keV) Ar + implantation have been studied as a function of Ar + ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×10 11 cm -2 , well below the amorphization threshold dose for silicon. In conjunction with the ion energy threshold established earlier for silicon surface damage effects (about 25 eV), these results outline fundamental limits on the effect of ion-assisted dry etching processes on silicon surface barriers.
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