Abstract
Abstract The occurrence of swirls and the amplitude of dopant striations in dislocation-free silicon is shown to be strongly influenced by the cooling rate during crystal growth. It has been found that the formation of swirls can be prevented if the cooling rate does not exceed 5°C/min. It is argued that at this cooling rate the concentration of thermal defects decreases below the critical value necessary for swirl formation by diffusion to the crystal surface. In addition the amplitude of dopant striations is reduced by solid-state diffusion, which permits the growth of more homogeneous silicon crystals.
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