Effect of localized states on internal quantum efficiency of III‐nitride LEDs

Abstract

AbstractA model is suggested accounting for effects of localized electron and hole states formed by composition fluctuations in the InGaN active region of a III‐nitride LED on non‐radiative carrier recombination at threading dislocations. The model enables explanation of the abnormal temperature dependence of internal quantum efficiency (IQE) of a green LED structure recently observed at low current densities. The theoretical predictions are in quantitative agreement with experiment in the temperature range between 200 K and 453 K. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)