Abstract
Results of photoconductivity rise–decay and photovoltaic studies are presented for some (Cd–Zn)S and (Cd–Pb)S films prepared in the presence of LiF as the flux and La and Pr as the impurities. The nature of the rise and decay curves is discussed, and values of lifetime, mobility and trap depths are presented. The lifetime and mobility both improve in the presence of impurities, which may be responsible for high sensitization. Band gaps of the materials are evaluated from excitation spectra. Values of the short circuit current (Isc), open circuit voltage (Voc), fill factor and efficiency of photovoltaic studies are also presented. Efficiencies of the order of 2.1–3.44% are found.
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