Abstract
Directly ion-beam deposited AlN films were used as insulating barriers for spin-dependent tunneling junctions, and the effect of the lead resistance on the measured Δ R/ R was investigated. `Bow-tie’ junctions with AlN thicker than 15 Å showed non-linear I– V characteristics with Δ R/ R of 1.4%. Junctions with AlN films thinner than 12 Å showed small `negative’ resistance with Δ R/ R of −14%. The finite-element analysis was used to simulate the current flow and the measured resistance of the `bow-tie’ structure with different resistance ratios of the tunneling junction to the lead. The result of simulation shows when the ratio is smaller than 0.077, the measured resistance becomes negative, and Δ R/ R is significantly enhanced by the lead effect.
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