Abstract
We report on ferromagnetic spin-dependent tunneling (SDT) junctions with NiFe/AlN/NiFe and NiFe/AlON/NiFe structures. Good barriers were formed by plasma nitridation and oxy-nitridation of Al films. Tunneling magnetoresistance ratios (TMR) up to 18% were observed at room temperature. The devices exhibit lower resistance-area products than those seen in reference junctions with Al2O3 barriers. The degradation in TMR at higher bias voltages is found to be less than that found in standard alumina junctions. AlN and AlON could thus be alternate materials for the tunnel barrier in SDT junctions.
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