Effect of Laser Sources on the Structural Damage Mechanisms and Reverse-bias Leakages of Laser Lift-off GaN-based LEDs

Abstract

The frequency-tripled Nd YAG laser (355nm) and the KrF pulsed excimer laser (248 nm) were used to separate GaN from sapphire substrates. The laser damage mechanism of these two laser sources and effects on the reverse-bias leakages of GaN-based light-emitting diodes (LEDs) were studied.