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https://doi.org/10.1149/1.2983167
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Cite Journal: Electrochemical Society Transactions |  Publication Date: Oct 3, 2008 |
 License type: iop-standard |
Affiliation: National Yang Ming Chiao Tung University
The frequency-tripled Nd YAG laser (355nm) and the KrF pulsed excimer laser (248 nm) were used to separate GaN from sapphire substrates. The laser damage mechanism of these two laser sources and effects on the reverse-bias leakages of GaN-based light-emitting diodes (LEDs) were studied.
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