Effect of laser parameters on ultra-short laser processing of SiC

Abstract

Crystalline silicon carbide (SiC) is a very attractive material in the fields of microelectronics, MEMS and biomedicine mainly due to its chemical inertness and mechanical strength. It is used for SiC MEM sensors, micro motors and resonators [1]. In the biomedical field, SiC is emerging as a promising material for additional coating of biomaterials due to its other useful properties (hardness, lightness, impermeability and good compatibility). For instance, in combination with bioglass, it is used for bone regeneration and as coating of some metal alloys, as it forms a bone-like layer on the surface upon contact with body fluids [2]. We studied the results of microporous modifications on the SiC surface irradiated by ultrashort laser pulses in view of further biomedical applications. The nanostructures were formed on the surface of a silicon carbide sample by using a regeneratively amplified Ti:sapphire femtosecond laser emitting at 800 nm. The SiC samples were irradiated as the laser light parameters (power, energy and number of applied pulses) were varied and the surface morphological changes were investigated. Modification of the topography of the silicon carbide substrates could substantially improve the bioactivity properties of this material, which, after proper laser parameters optimization, could make its biomedical application even more successful.