Abstract
The effect of laser irradiation on the growth rate of ZnSe grown by metalorganic molecular beam epitaxy (MOMBE) using diethylzinc (DEZn) and diethylselenium (DESe), and by molecular beam epitaxy (MBE), has been studied. An argon ion laser and a Ti:sapphire laser were used. It was observed that laser irradiation significantly enhanced the growth rate for MOMBE using uncracked DEZn and either cracked DESe or solid Se. A suppression of the growth rate was found for MBE or “MBE-like” MOMBE growth. The enhancement or suppression was only observed when the photon energy of the selected laser emission line was sufficient to generate electron-hole pairs, implying that photo-generated carriers were responsible for both phenomena. Electron beam-induced growth rate enhancement was also observed under the same conditions which produced growth rate enhancement with laser irradiation. Secondary ion mass spectroscopy (SIMS) revealed that carbon incorporation was very low in the ZnSe films grown with these metalorganic sources.
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