Abstract
Ultraviolet (UV) laser lights were irradiated on Si field emitter arrays before and during electron emission to investigate the surface cleaning effect of laser light irradiation. UV light irradiation for 2–10 min before electron emission in a vacuum resulted in enhanced electron emission by 50%, which gradually decreased after further aging. Laser light irradiation during electron emission could induce enhanced electron emission by a factor of 2.4 due to photoinduced carrier generation and surface cleaning, and higher electron emission by a factor of 2 than the initial emission was observed even after laser light irradiation and prolonged aging for 20 h.
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