Abstract
When Raman microscopy is adopted to detect the chemical and biological processes in the silicon microfluidic channel, the laser-induced heating effect will cause a temperature rise in the sample liquid. This undesired temperature rise will mislead the Raman measurement during the temperature-influencing processes. In this paper, computational fluid dynamics simulations were conducted to evaluate the maximum local temperature-rise (MLT). Through the orthogonal analysis, the sensitivity of potential influencing parameters to the MLT was determined. In addition, it was found from transient simulations that it is reasonable to assume the actual measurement to be steady-state. Simulation results were qualitatively validated by experimental data from the Raman measurement of diffusion, a temperature-dependent process. A correlation was proposed for the first time to estimate the MLT. Simple in form and convenient for calculation, this correlation can be efficiently applied to Raman measurement in a silicon microfluidic channel.
Highlights
The last decade has witnessed an explosive growth in applications of microfluidic channels to chemical and biological fields [1,2,3,4,5]
In the application of microfluidic systems, the Raman microscope has proved to be useful to perform in situ monitoring of chemical and biochemical processes [6,7,8,9,10]
The heating effect was measured by the maximum local temperature-rise (MLT), and it was necessary to illustrate the location of the MLT as well as the temperature profile
Summary
The last decade has witnessed an explosive growth in applications of microfluidic channels to chemical and biological fields [1,2,3,4,5]. This has been driven by the trends of shrinking conventional benches to a small size to realize major advantages of efficiency, performance, integration, speed and cost. Silicon was the representative material of the microelectronics, and was directly utilized for microfluidics. It is indispensable for the specialized systems that require mechanical, chemical and thermal stability.
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