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Abstract
This study adopted the flash evaporation technique to prepare SnSe thin films onto glass substrates kept at room temperature. The effect of CO2 laser annealing on the structural properties and thermoelectric characterizations of SnSe films was investigated in power annealing (10 W) at (10,15,20 Min). Morphologies and structures of the crystalline were determined using an atomic force microscope and X-ray diffraction. Power factor, electrical conductivity, and the Seebeck coefficients were determined. The results demonstrated that the power factor and the Seebeck coefficient were enhanced as the annealing time increased. When the annealing time reaches twenty minutes at 500K, the power factor and Seebeck coefficient of SnSe thin films were found to be about 6.33 μW/cm.K2 and 650 μV/K., respectively.
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