Abstract
We have analysed our experimental data on electronic transport in bulk doped and compensated CdTe crystals. The level of doping has been varied from the weak doping to the high doping limit. It has been shown that the data obtained can be explained by the presence of large-scale potential relief owing to an inhomogeneous impurity distribution. As for the case of heavily doped crystals (including low resistivity samples and semi-insulating samples) the energy and spatial scales of the potential are controlled by the spatial correlation of impurities and defects.
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