Abstract
In addition to the well-known advantages, ensuring intensive introduction of ion-beam doping in present-day semiconductor technology, this method allows the principal parameters of MOS systems to be controlled. Implantation is an effective method of low-temperature passivation of SiO2-Si systems. The application of ion-beam doping for controlled charges in the parameters of MOS systems will make it possible to enhance the stability and quality of semiconductor devices and integrated circuits.
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