Abstract
The authors have investigated the effects of 200 and 300keV electron-beam irradiations on amorphization in 6H-SiC at 100 and 295K. Amorphization is induced by the accumulation of defects produced by direct atomic displacements. Dynamic recovery of these defects during irradiation, due to temperature increases and ionization effects, results in increases in the amorphization dose. By comparing with previous data for 2MeV electrons and 1.5MeV Xe ions, the results demonstrate that ionization-enhanced recovery in 6H-SiC dramatically increases above an ionization rate threshold.
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