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https://doi.org/10.1109/cleopr.2007.4391346
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Cite Publication Date: Aug 1, 2007 |
Affiliation: Korea Advanced Institute of Science and Technology
The effect of ion-irradiation induced defect on the optically active Er3+ ions in Er doped silicon-rich silicon oxide (SRSO) film is investigated. We find that the initial presence of defects strongly reduces the fraction of Er ions that can be excited via nc-Si even after their removal via high-temperature annealing.
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