Abstract
The effect of 50 MeV Ni ion irradiation on Au/n-GaN Schottky diode has been studied by in situ current voltage characterization. The variation of Schottky parameters with ion irradiation is discussed by varying the irradiation fluence from 5 × 10 9 to 5 × 10 11 ions cm −2. These results are interpreted on the basis of energy loss mechanisms of swift heavy ion (SHI) irradiation at the metal–semiconductor interface.
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