Abstract
Ion and electron flow characteristics have been studied in different regimes both in rf (13.56 MHz) and VHF (58 MHz) glow discharges in silane. The measurements were conducted in a growth reactor and the data obtained was used for SiHx films deposition. Electronic properties of the films prepared under a variety of ion bombardment in rf, VHF discharges have been investigated. Correlation of these properties with ion parameters in rf, VHF discharges is discussed.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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