Abstract
Transparent conductive tin-doped indium-oxide films are produced by alternate processes of reactive high-frequency magnetron sputtering and ion treatment. The stressed states of the indium-tinoxide (ITO) films are studied by X-ray diffraction analysis. The effect of the technological conditions on changes in mactostresses in the ITO films is shown.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
