Abstract
The mechanism of polarization reversal in non-uniform telluric acid ammonium phosphate (TAAP) ferroelectric crystal has been found to be strongly influenced by an internal bias field distribution. It was shown that the internal bias field, originated from some structural defects can stabilize local domain structures, causing its fast spontaneous return to the original state. To reveal the effect of E b on the domain motion, measurements of the distribution of domain wall velocity during switching and spontaneous backswitching processes have been performed. A qualitative approach was proposed in order to find a distribution of the E b in the crystal.
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