Abstract
By evaporating undoped CdTe layers onto indium tin oxide (ITO), followed by a layer of In or CrOx, back-effect photovoltaic cells In/CdTe/ITO and CrOx/CdTe/ITO were prepared. It was shown that reducing the area of grain boundaries in CdTe, bringing the space-charge region farther away from the defect-rich region at the CdTe/ITO interface, and employing CrOx instead of In back contacts raise the quantum efficiency of the devices to 6%.
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