Effect of interface state distribution on field effect conductance activation energy in hydrogenated amorphous silicon thin film transistors

Abstract

The gate voltage dependencies of conductance activation energy of source-drain current are investigated for hydrogenated amorphous silicon thin film transistor. We compared the calculated activation energy with experimental results and discussed the density of gap and interface states in hydrogenated amorphous silicon. The experimental results could be explained by the introduction of the interface state distribution with exponential tails near the conduction band edge in parallel with the bulk gap state distribution.