Abstract
Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.
Highlights
Auger recombination is a fundamental nonradiative recombination process that exists in all semiconductors,[1] and is theoretically determined by using the appropriate band structure and quantum states in Fermi’s Golden Rule
Theoretical studies were carried out to evaluate the impact of interface roughness on the Auger recombination process in semiconductor quantum well (QW)
Our analysis shows that the existence of interface roughness results in a significant enhancement of the Auger recombination process, leading to a large Auger recombination coefficient
Summary
Auger recombination is a fundamental nonradiative recombination process that exists in all semiconductors,[1] and is theoretically determined by using the appropriate band structure and quantum states in Fermi’s Golden Rule. One would expect rougher interfaces will affect the quantum states and subsequently the recombination probability between states It is an unknown exactly how interface roughness impacts the Auger recombination process in QWs. In this article, we present a theoretical analysis of Auger recombination in semiconductor QWs, comparing QWs with varying degrees of interface roughness. The interface roughness is shown to play an important role, causing a large increase in the Auger recombination rate because of the additional energy states that can participate in the process. In the technologically important III-nitride semiconductors the increase can be four orders of magnitude over a QW with perfect heterointerfaces illustrating the importance of including interface roughness when calculating Auger recombination rates
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